دیتاشیت FDP023N08B-F102

FDP023N08B_F102

مشخصات دیتاشیت

نام دیتاشیت FDP023N08B_F102
حجم فایل 766.775 کیلوبایت
نوع فایل pdf
تعداد صفحات 12

دانلود دیتاشیت FDP023N08B_F102

FDP023N08B_F102 Datasheet

مشخصات

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: onsemi FDP023N08B-F102
  • Operating Temperature: -55°C~+175°C@(Tj)
  • Power Dissipation (Pd): 245W
  • Total Gate Charge (Qg@Vgs): 195nC@10V
  • Drain Source Voltage (Vdss): 75V
  • Input Capacitance (Ciss@Vds): 13765pF@37.5V
  • Continuous Drain Current (Id): 120A
  • Gate Threshold Voltage (Vgs(th)@Id): 3.8V@250uA
  • Reverse Transfer Capacitance (Crss@Vds): -
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 2.35mΩ@75A,10V
  • Package: TO-220
  • Manufacturer: onsemi
  • Series: PowerTrench®
  • Packaging: Tube
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 75V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 2.35mOhm @ 75A, 10V
  • Vgs(th) (Max) @ Id: 3.8V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 195nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 13765pF @ 37.5V
  • FET Feature: -
  • Power Dissipation (Max): 245W (Tc)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3
  • Base Part Number: FDP023
  • detail: N-Channel 75V 120A (Tc) 245W (Tc) Through Hole TO-220-3

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